Blank Cover Image

Relaxation-Induced Excess Leakage Current in Recessed Si₁₋xGex Source/Drain Junctions

Author(s):
M. B. Gonzalez
M. Chowdhury
N. Bhouri
P. Verheyen
F. Leys
O. Richard
R. Loo
C. Claeys
B. Simoen
V. Machkaoutsan
P. Tomasini
S. Thomas
J. Lu
J. Weijtmans
R. Wise
10 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
Title of ser.:
ECS transactions
Ser. no.:
6(1)
Pub. Year:
2007
Page(from):
389
Page(to):
396
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775502 [1566775507]
Language:
English
Call no.:
E23400/6-1
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes

E.R. Simoen, M.B. Gonzalez, G. Eneman, P. Verheyen, C.L. Claeys

Electrochemical Society
7 Conference Proceedings SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

M. Bauer, V. Machkaoutsan, Y. Zhang, D. Weeks, J. Spear

Electrochemical Society
2 Conference Proceedings Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions

M.B. Gonzalez, N. Thomas, E. Simoen, P. Verheyen, A. Hikavyy

Electrochemical Society
8 Conference Proceedings Lifetime and Leakage Current Studies in Shallow P-N Junctions

Poyai, A., Simoen, E., Claeys, C., Rooyackers, R., Badenes, G., Gaubas, E.

Electrochemical Society
3 Conference Proceedings Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

R. Loo, P. Verheyen, R. Rooyackers, C. Walczyk, F. Leys

Electrochemical Society
9 Conference Proceedings Defect Engineering Considerations for Strained Silicon Substrates

C. Claeys, G. Eneman, M. Scholz, R. Loo, P. Verheyen, K. De Meyer, E. R. Simoen

Electrochemical Society
4 Conference Proceedings Impact of Millisecond Laser Anneal on the Thermal Stress- Induced Defect Creation in Si1-xGex Source /Drain Junctions

M.B. Gonzalez, E. Simoen, E. Rosseel, P. Verheyen, L. Souriau

Electrochemical Society
10 Conference Proceedings Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well

Poyai,A., Simoen,E., Claeys,C., Rooyackers,R., Badenes,G., Gaubas,E.

Electrochemical Society, SPIE-The International Society for Optical Engineering
5 Conference Proceedings P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal

Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Simons, V., Loo, R., Caymax, M., De Meyer, K., Vandervorst, W., …

Electrochemical Society
11 Conference Proceedings Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices

M. Bauer, D. Weeks, Y. Zhang, V. Machkaoutsan

Electrochemical Society
6 Conference Proceedings Defect Free Embedded Silicon Carbon Stressor Selectively Grown into Recessed Source Drain Areas of NMOS Devices

M. Bauer, Y. Zhang, D. Weeks, V. Machkaoutsan, S. Thomas

Electrochemical Society
12 Conference Proceedings Origin and Suppression of Junction Leakage in Germanium-On-Silicon Structures

C. Claeys, S. Sonde, E. Simoen, A. Satta, B. De Jaeger, G. Nicolas, M. Meuris

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12