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Gate Quality AlO3 by Molecular-Atomic-Deposition (MAD) and its Potential Applications in III-V Semiconductor CMOS Technology

Author(s):
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
Title of ser.:
ECS transactions
Ser. no.:
6(1)
Pub. date:
2007
Page(from):
321
Page(to):
330
Pages:
10
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775502 [1566775507]
Language:
English
Call no.:
E23400/6-1
Type:
Conference Proceedings

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