Thermodynamic Properties of Trace Water Vapor in High Purity Hydrogen Bromide used for Semiconductor Processing

Thermodynamic Properties of Trace Water Vapor in High Purity Hydrogen Bromide used for Semiconductor Processing

Author(s):

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

Title of ser.:

ECS transactions

Ser. no.:

6(1)

Pub. Year:

2007

Page(from):

309

Page(to):

320

Pages:

12

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775502 [1566775507]

Language:

English

Call no.:

E23400/6-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047125
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 211th
Conf. info. (Venue):	Chicago, IL, USA
Conf. info. (Date):	2007.05.06-2007.05.10

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