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Structural and Electrical Properties of High Pressure Hydrogen Post-Annealed Pt-Er Alloy Metal Gate on HfO2 Film

Author(s):
C. Choi
M. Jang
Y. Kim
M. Jeon
S. Lee
H. Yang
R. Jung
M Chang
H. Hwang
4 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
Title of ser.:
ECS transactions
Ser. no.:
6(1)
Pub. Year:
2007
Page(from):
295
Page(to):
302
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775502 [1566775507]
Language:
English
Call no.:
E23400/6-1
Type:
Conference Proceedings

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