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Structural and Electrical Properties of Er2O3 Thin Films Deposited by RF Sputtering for Gate Dielectric Applications

Author(s):
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
Title of ser.:
ECS transactions
Ser. no.:
6(1)
Pub. date:
2007
Page(from):
239
Page(to):
246
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775502 [1566775507]
Language:
English
Call no.:
E23400/6-1
Type:
Conference Proceedings

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