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DyScHfOx as High-k Gate Dielectrics: Structural and Electrical Properties

Author(s):
C. Adelmann
S. Van Elshocht
P. Lehnen
T. Canard
A. Franquet
C. Zhao
L. Ragnarsson
V. Chang
H. Choi
Y. Hong-Yu
S. De Gendt
6 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment
Title of ser.:
ECS transactions
Ser. no.:
6(1)
Pub. Year:
2007
Page(from):
113
Page(to):
120
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775502 [1566775507]
Language:
English
Call no.:
E23400/6-1
Type:
Conference Proceedings

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