Influence of Annealing Treatments on the Morphology and Electrical Properties of GeOI Substrates Obtained by Ge Condensation

Influence of Annealing Treatments on the Morphology and Electrical Properties of GeOI Substrates Obtained by Ge Condensation

Author(s):

J. Damlencourt

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment

Title of ser.:

ECS transactions

Ser. no.:

6(1)

Pub. Year:

2007

Page(from):

65

Page(to):

72

Pages:

8

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775502 [1566775507]

Language:

English

Call no.:

E23400/6-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047125
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	3rd ; 211th
Conf. info. (Venue):	Chicago, IL, USA
Conf. info. (Date):	2007.05.06-2007.05.10

Similar Items:

1 Conference Proceedings Epitaxial Regrowth of Ge on SGOI and GeOI Su,bstrates Obtained by Ge Condensation J. Damlencourt, Y. Campidelli, M. Roure, B. Vincent, E. Martinez, F. Fillot, B. Arrazat, T. Nguyen, S. Cristoloveanu, L. … Electrochemical Society	7 Conference Proceedings Substrate bias effects in SOI FinFETs Pretet, J., Dauge, F., Vandooren, A., Mathew, L., Nguyen, B.-Y., Jomash, J., Cristoloveanu, S. Electrochemical Society
2 Conference Proceedings Review of Some Critical Aspects of Ge and GeOI Substrates L. Clavelier, C. Le Royer, Y. Morand, C. Deguet, B. Vincent Electrochemical Society	8 Conference Proceedings Investigating Electronic and Chemical Properties of Ge/GeOxNy/HfO2 Gate Stacks: High-Resolution Photoelectron Spectroscopy Using Synchrotron Radiation O. J. Renault, E. Martinez, L. Fourdrinier, L. Clavelier, N. Barrett, C. Le Royer, C. Crotti Electrochemical Society
3 Conference Proceedings Ge Enrichment Technique on SiGe/SOI Mesa Islands: a Localized GeOI Structures Fabrication Method B. Vincent, J.-F. Damlencourt, Y. Morand, D. Rouchon, M. Mermoux Electrochemical Society	9 Conference Proceedings Strained Silicon on Insulator Wafers Made by the Smart CutTM Technology Ghyselen, B., Bogumilowicz, Y., Aulnette, C., Abbadie, A., Osternaud, B., Besson, P., Daval, N., Andrieu, F., … Materials Research Society
4 Conference Proceedings 200 mm Germanium-on-Insulator (GeOI) Structures Realized from Epitaxial Wafers using the Smart CutTM Technology Deguet, C., Dechamp, J., Morales, C., Charvet, A.M., Clavelier, L., Loup V., Hartmann, J.M., Kernevez, N., Campidelli, … Electrochemical Society	10 Conference Proceedings Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully-Processed 200mm GeOI Substrates L. Hutin, C. Le Royer, C. Tabone, V. Carron, V. Delaye Electrochemical Society
5 Conference Proceedings Tuning the Electrostatic Properties of Silicon-on-Insulating Multilayer (SOIM) Structures M. Kostrzewa, T. Nguyen, J. Mazellier, C. Deguet, L. Clavelier Electrochemical Society	11 Conference Proceedings High Hole Mobility SGOI Substrates Obtained by the Germanium Condensation Technique L. Souriau, T. Nguyen, E. Augendre, R. Loo, V. Terzieva Electrochemical Society
6 Conference Proceedings Influence of the annealing duration on the interface roughness and electrical properties of low-dose SIMOX wafers Munteanu, D., Guilhalmenc, C., Cristoloveanu, S., Moriceau, H., Cartier, A.M., Aspar, B. Electrochemical Society	12 Conference Proceedings Influence of Substrate Temperature and Post-Annealing Treatment on the Microstructure and Electric Properties of ZnO:Al Thin Films Deposited by Sputtering C.B. Garcia, E. Ariza, C.J. Tavares Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12