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Early Voltage Behavior in Circular Gate SOI nMOSFET Using 0.13 μm Partially-Depleted SOI CMOS Technology

Author(s):
Publication title:
Microelectronics Technology and Devices : SBMICRO 2006
Title of ser.:
ECS transactions
Ser. no.:
4(1)
Pub. date:
2006
Page(from):
309
Page(to):
318
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775120 [1566775124]
Language:
English
Call no.:
E23400/4-1
Type:
Conference Proceedings

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