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GaN-Based Devices for Reliable Operation at Very High Temperatures

Author(s):
A. M. Dabiran
A. V. Osinsky
P. P. Peter
R. C. Fitch
N. Moser
A. Crespo
T. J. Anderson
F. Ren
R. Khanna
L. Stafford
S. J. Pearton
6 more
Publication title:
State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7
Title of ser.:
ECS transactions
Ser. no.:
3(5)
Pub. date:
2006
Page(from):
349
Page(to):
358
Pages:
10
Pub. info.:
Pennington, N.J: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775052 [1566775051]
Language:
English
Call no.:
E23400/3-5
Type:
Conference Proceedings

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