Approaches to Reduced-Defect Active Regions for III-N Devices | 東京科学大学図書館文献データベース

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Approaches to Reduced-Defect Active Regions for III-N Devices

Author(s):

Publication title:

State-of-the-art program on compound semiconductors 45 (SOTAPOCS 45) and wide bandgap semiconductor materials and devices 7

Title of ser.:

ECS transactions

Ser. no.:

3(5)

Pub. Year:

2006

Page(from):

117

Page(to):

126

Pages:

10

Pub. info.:

Pennington, N.J: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775052 [1566775051]

Language:

English

Call no.:

E23400/3-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00047113
Series ID:	PA00000034
Conf. info. (Name):	Meeting of the Electrochemical Society
Conf. info. (Number):	210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03

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