Nitrogen-Doped Silicon: Mechanical, Transport and Electrical Properties

Nitrogen-Doped Silicon: Mechanical, Transport and Electrical Properties

Author(s):

J. D. Murphy

Publication title:

High purity silicon 9

Title of ser.:

ECS transactions

Ser. no.:

3(4)

Pub. Year:

2006

Page(from):

239

Page(to):

254

Pages:

16

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775045 [1566775043]

Language:

English

Call no.:

E23400/3-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00047112
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	2006 ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03

Similar Items:

1 Conference Proceedings Measurements of Dislocation Locking by Near-Surface Ion-Implanted Nitrogen in Czochralski Silicon C. Alpass, J. Murphy, A. Jain, P.R. Wilshaw Electrochemical Society	7 Conference Proceedings Nitrogen Diffusion in Silicon: a Multi-Species Process V. V. Voronkov, A. J. Faister Electrochemical Society
2 Conference Proceedings Impurity Locking of Dislocations in Silicon （Invited Paper） Giannattasio, A., Murphy, ID., Senkader, S., Falster, R.J., Wilshaw, P.R. Electrochemical Society	8 Conference Proceedings Light Emission From Erbium-Doped Si1-xGex Heterostructures Evans-Freeman, J. H., Naveed, A. T., Huda, M. Q., Peaker, A. R., Houghton, D. C., Wright, A. C. MRS - Materials Research Society
3 Conference Proceedings Dislocation Locking by Oxygen in Silicon: New Insights to Oxygen Difflision at Low Temperatures* Sendaker, S., Giannattosio, A., Faister, R., Wilshaw, P.R. Electrochemical Society	9 Conference Proceedings Temperature Dependence of the Electrical Transport of Carbon Doped GaN Geerts, Wim, MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Schmiedel, Thomas MRS - Materials Research Society
4 Conference Proceedings Locking of Dislocations by Oxygen in Cz-Silicon Senkader, S., Jurkschat, K., Wilshaw, P., Falster, R. Electrochemical Society	10 Conference Proceedings Nitrogen Implantation and Diffusion in Silicon Adam, L. S., Law, M. E., Dokumaci, O., Haddara, Y., Murthy, C., Park, H., Hegde, S., Chidambarrao, D., Mollis, S., … MRS - Materials Research Society
5 Conference Proceedings Electrical Characterisation of Defects in Polycrystalline B-Doped Diamond Films O.S. Elsherif, K.D. Vernon-Parry, J.H. Evans-Freeman, P.W. May Trans Tech Publications	11 Conference Proceedings Effects of Annealing on the Electrical Properties of Nitrogen-Doped Float-Zoned Silicon V. V. Voronkov, G. Voronkova, A. Batunina, R. J. Falster, L. Moiraghi, M. Milvidski Electrochemical Society
6 Conference Proceedings ELECTRICAL AND OPTICAL PROPERTIES OF ERBIUM IN MBE SILICON AND Si/Ge ALLOYS Efeoglu, H., Evans, J.H., Langer, J.M., Peaker, A.R., Rowell, N.L., Noel, J.-P., Perovic, D.D., Jackman, T.E., Houghton, … Materials Research Society	12 Conference Proceedings Defect Profiling with Low Energy Positrons of Nitrogen Implanted Silicon Werf,D.P.van der, Saleh,A.S., Towner,A., Nathwani,M., Taylor,J., Rice-Evans,P.C., Bull,S.J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12