First-Principle Study on the Identification of Nitrogen-Oxygen Defect Domplexes in Silicon

First-Principle Study on the Identification of Nitrogen-Oxygen Defect Domplexes in Silicon

Author(s):

Publication title:

High purity silicon 9

Title of ser.:

ECS transactions

Ser. no.:

3(4)

Pub. Year:

2006

Page(from):

127

Page(to):

134

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775045 [1566775043]

Language:

English

Call no.:

E23400/3-4

Type:

Conference Proceedings

Details

TDL ID:	ZA00047112
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
Conf. info. (Number):	2006 ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.29-2006.11.03

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