Development of 300 mm MOCVD HfSiO x Process

Development of 300 mm MOCVD HfSiO x Process

Author(s):

X. Shi

Publication title:

Physics and technology of high-k gate dielectrics 4

Title of ser.:

ECS transactions

Ser. no.:

3(3)

Pub. Year:

2006

Page(from):

417

Page(to):

424

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

Language:

English

Call no.:

E23400/3-3

Type:

Conference Proceedings

Details

TDL ID:	ZA00047111
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
Conf. info. (Number):	4th ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.30-2006.11.03

Similar Items:

1 Conference Proceedings Scaling Down of MOCVD HfSiON to 1nm EOT X. Shi, A. Rothschild, J.L. Everaert, S. Van Elshocht, L. Date Electrochemical Society	7 Conference Proceedings High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies Caymax, Matty, Bender, H., Brijs, B., Conard, T., Gendt, S. De, Delabie, A., Heyns, M., Onsia, B., Ragnarsson, L., … Materials Research Society
2 Conference Proceedings Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon Elshocht, S.Van, Caymax, M., Gendt, S.De, Conard, T., Petry, J., Claes, M., Witters, T., Zhao, C., Brijs, B., Richard, … Materials Research Society	8 Conference Proceedings Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD Elshocht, S.Van, Brijs, B., Caymax, M., Conard, T., Gendt, S.De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., … Materials Research Society
3 Conference Proceedings Simulation of the MOCVD Reactor for ZnO Growth Liu, S. M., Gu, S. L., Qin, F., Zhu, S. M., Ye, J. D., Liu, W., Zhou, X., Zhang, R., Shi, Y., Zheng, Y. D. Trans Tech Publications	9 Conference Proceedings Physical Characterization of HfO2 Deposited on Ge Substrates by MOCVD Elshocht, S.Van, Brijs, B., Caymax, M., Conard, T., Gendt, S.De, Kubicek, S., Meuris, M., Onsia, B., Richard, O., … Materials Research Society
4 Conference Proceedings Scalability of MOCVD-Deposited Hafnium Oxide Elshocht, S. Van, Carter, R., Caymax, M., Claes, M., Conard, T., Date, L., Gendt, S. De, Kaushik, V., Kerber, A., Kluth, … Materials Research Society	10 Conference Proceedings Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD) V. S. Chang, Y. Hou, P. Hau, P. Lim, L. Yao, F. Yen, C. Hung, H. Lin, J. Jiang, Y. Jin, C. Chen, H. Tao, S. Chen, S. … Electrochemical Society
5 Conference Proceedings Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire Ye, J. D., Gu, S. L., Zhu, S. M., Liu, S. M., Qin, F., Liu, W., Zhou, X., Zhang, R., Shi, Y., Zheng, Y. D. Trans Tech Publications	11 Conference Proceedings Process development of 50-A IMP Ti with <2% thickness uniformity for 300-mm iLB Zhang,X., Pancham,I., Chan,A.C.-T., Subamani,M., Forster,J., Gogh,J.von SPIE-The International Society for Optical Engineering
6 Conference Proceedings HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle L. Nyns, A. Delabie, M. Caymax, M.M. Heyns, S. Van Elshocht Electrochemical Society	12 Conference Proceedings Influence of Process Parameters on Resistive Switching in MOCVD NiO Films X.P. Wang, D.J. Wouters, M. Toeller, J. Meersschaut, L. Goux, Y.Y. Chen, B. Govoreanu, L. Pantisano, R. Degraeve, M. … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12