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Advanced Metal Gate Electrode Options Compatible with ALD and AVD HfSiO x-Based Gate Dielectrics

Author(s):
Z. Karim
O. Biossiere
C. Lohe
Z. Zhang
C. Manke
P. Lehnen
P. K. Baumann
J. Dalton
W. Park
S. Ramanathan
J. Lindner
F. Seidel and
7 more
Publication title:
Physics and technology of high-k gate dielectrics 4
Title of ser.:
ECS transactions
Ser. no.:
3(3)
Pub. Year:
2006
Page(from):
363
Page(to):
374
Pages:
12
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775038 [1566775035]
Language:
English
Call no.:
E23400/3-3
Type:
Conference Proceedings

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