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Correlation Between High-K Properties and Interfacial Chemical Structure of ALD HhO2 Thin Films on Si, Sil-xGex and Ge Substrates

Author(s):
Publication title:
Physics and technology of high-k gate dielectrics 4
Title of ser.:
ECS transactions
Ser. no.:
3(3)
Pub. Year:
2006
Page(from):
111
Page(to):
120
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775038 [1566775035]
Language:
English
Call no.:
E23400/3-3
Type:
Conference Proceedings

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