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Electrical Characteristics of Ge-Nanocrystal Embedded MOS Capacitors for Non-Volatile-Memory Application

Author(s):
S. Choi
Y. Park
K. Cho
T. Kang
T. Kim
B. Park
S. Kim
2 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
Title of ser.:
ECS transactions
Ser. no.:
3(2)
Pub. date:
2006
Page(from):
449
Page(to):
456
Pages:
8
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775021 [1566775027]
Language:
English
Call no.:
E23400/3-2
Type:
Conference Proceedings

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