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Geometry Dependence of Poly-Si Oxidation and its Application to Self-Align, Maskless Process for Nano-scale Vertical CMOS Structures

Author(s):
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
Title of ser.:
ECS transactions
Ser. no.:
3(2)
Pub. Year:
2006
Page(from):
403
Page(to):
414
Pages:
12
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775021 [1566775027]
Language:
English
Call no.:
E23400/3-2
Type:
Conference Proceedings

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