Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies | 東京工業大学附属図書館文献データベース

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Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies

Author(s):

Publication title:

Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment

Title of ser.:

ECS transactions

Ser. no.:

3(2)

Pub. Year:

2006

Page(from):

233

Page(to):

246

Pages:

14

Pub. info.:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775021 [1566775027]

Language:

English

Call no.:

E23400/3-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047110
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS ; Meeting of the Electrochemical Society
Conf. info. (Number):	2nd ; 210th
Conf. info. (Venue):	Cancun, Mexico
Conf. info. (Date):	2006.10.30-2006.11.02

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