Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies
- Author(s):
J. A. Kitti A. Lauwers M. van Dal H. Yu A. Veloso T. Hoffinann M. Pawlak C. Demeurisse S. Kubicek M. Niwa C. Vrancken P. Absil S. Bieseinans - Publication title:
- Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
- Title of ser.:
- ECS transactions
- Ser. no.:
- 3(2)
- Pub. Year:
- 2006
- Page(from):
- 233
- Page(to):
- 246
- Pages:
- 14
- Pub. info.:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566775021 [1566775027]
- Language:
- English
- Call no.:
- E23400/3-2
- Type:
- Conference Proceedings
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