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Ni, Pt and Yb Based Fully Silicided (FUSI) Gates for Scaled CMOS Technologies

Author(s):
J. A. Kitti
A. Lauwers
M. van Dal
H. Yu
A. Veloso
T. Hoffinann
M. Pawlak
C. Demeurisse
S. Kubicek
M. Niwa
C. Vrancken
P. Absil
S. Bieseinans
8 more
Publication title:
Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment
Title of ser.:
ECS transactions
Ser. no.:
3(2)
Pub. date:
2006
Page(from):
233
Page(to):
246
Pages:
14
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775021 [1566775027]
Language:
English
Call no.:
E23400/3-2
Type:
Conference Proceedings

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