Threading vs Misfit Dislocations in Strained Si/SiGe Heterostructures:Preferential Etching and Minority Carrier Transient Spectroscopy

Threading vs Misfit Dislocations in Strained Si/SiGe Heterostructures:Preferential Etching and Minority Carrier Transient Spectroscopy

Author(s):

J. Lu

Publication title:

Silicon materials science and technology X

Title of ser.:

ECS transactions

Ser. no.:

2(2)

Pub. Year:

2006

Page(from):

569

Page(to):

578

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774390 [156677439X]

Language:

English

Call no.:

E23400/2-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047107
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology : Meeting of the Electrochemical Society
Conf. info. (Number):	10th ; 209th
Conf. info. (Venue):	Denver, CO, USA
Conf. info. (Date):	2006.05.07-2006.05.12

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