Defect Engineering Considerations for Strained Silicon Substrates

Defect Engineering Considerations for Strained Silicon Substrates

Author(s):

C. Claeys

Publication title:

Silicon materials science and technology X

Title of ser.:

ECS transactions

Ser. no.:

2(2)

Pub. Year:

2006

Page(from):

349

Page(to):

362

Pages:

14

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774390 [156677439X]

Language:

English

Call no.:

E23400/2-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047107
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology : Meeting of the Electrochemical Society
Conf. info. (Number):	10th ; 209th
Conf. info. (Venue):	Denver, CO, USA
Conf. info. (Date):	2006.05.07-2006.05.12

Similar Items:

1 Conference Proceedings P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Simons, V., Loo, R., Caymax, M., De Meyer, K., Vandervorst, W., … Electrochemical Society	7 Conference Proceedings (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices Loo, R., Delhougne, R., Meunier-Beillard, P., Caymax, M., Verheyen, P., Eneman, G., Wolf, I.De, Janssens, T., Benedetti, … Materials Research Society
2 Conference Proceedings The Low-Frequency Noise in n-MOSFETs on Strained Silicon: Is There Room for Improvement? Simoen, E., Eneman, G., Verheyen, P., Delhougne, R., Rooyackers, R., Loo, R., Vandervorst, W., De Meyer, K., Claeys, C. Electrochemical Society	8 Conference Proceedings Defect Engineering in High-Mobility Substrates for Advanced CMOS Technologies (Invited) Claeys, C., Simoen, E. Electrochemical Society
3 Conference Proceedings N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Ries, M., Loo, R., Caymax, M., Vandervorst, W., De Meyer, K. Materials Research Society	9 Conference Proceedings The effect of substrate radiation-induced defects on the operation of deep submicron silicon technologies Simoen, E., Claeys, C., Poyai, A. Electrochemical Society
4 Conference Proceedings Analysis of Junctions Formed in Strained Si/SiGe Substrates Eneman, G., Simoen, E., Lauwers, A., Lindsay, R., Verheyen, P., Delhougne, R., Loo, R., Caymax, M., Meunier-Beillard, … Materials Research Society	10 Conference Proceedings The Combination of Embedded Si_1-xGe_x S/D and Metal Gate Options for High Performance pMOS Transistors P. Verheyen, S. Severi, G. Eneman, R. Loo, D. Shamiryan Electrochemical Society
5 Conference Proceedings Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices E.R. Simoen, G. Eneman, P. Verheyen, R. Loo, M. Bargallo Gonzalez Electrochemical Society	11 Conference Proceedings Electrical Performance and Reliability Aspects of Strain Engineered Deep Submicron CMOS Technologies C. Claeys, G. Eneman, M. Bargallo Gonzalez, S. Put, E. Simoen Electrochemical Society
6 Conference Proceedings Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes E.R. Simoen, M.B. Gonzalez, G. Eneman, P. Verheyen, C.L. Claeys Electrochemical Society	12 Conference Proceedings Point-Defect Generation in Ni-, Pd-, and Pt-Germanided Schottky Bafflers on N-Type Germanium Substrates E. R. Simoen, K. Opsomer, C. L. Claeys, K. Maex, C. Detavernier, R. Van Meirhaeghe, S. Forment, P. Clauws Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12