First Principles Calculation for Cu Gettering by Dopant or Dopant-Vacancy Complex in Silicon Crystal

First Principles Calculation for Cu Gettering by Dopant or Dopant-Vacancy Complex in Silicon Crystal

Author(s):

Publication title:

Silicon materials science and technology X

Title of ser.:

ECS transactions

Ser. no.:

2(2)

Pub. Year:

2006

Page(from):

261

Page(to):

274

Pages:

14

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774390 [156677439X]

Language:

English

Call no.:

E23400/2-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047107
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on Silicon Materials Science and Technology : Meeting of the Electrochemical Society
Conf. info. (Number):	10th ; 209th
Conf. info. (Venue):	Denver, CO, USA
Conf. info. (Date):	2006.05.07-2006.05.12

Similar Items:

1 Conference Proceedings FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY Karoui, A., Karoui, F.S., Rozgonyi, G.A., Hourai, M., Sueoka, K. Electrochemical Society	7 Conference Proceedings Modeling of Internal Gettering for Metal Impurities by Oxide Precipitates in CZ-Si Wafer Sueoka, K. Electrochemical Society
2 Conference Proceedings FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY Karoui, A., Karoui, F.S., Rozgonyi, G.A., Hourai, M., Sueoka, K. Electrochemical Society	8 Conference Proceedings CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON Akatsuka, M., Okui, M., Umeno, S., Sueoka, K. Electrochemical Society
3 Conference Proceedings First Principles Analysis of Ultra-Thin Silicon Films with Dimer Structures Eiji Kamiyama, Koji Sueoka Materials Research Society	9 Conference Proceedings CALCULATION OF SIZE DISTRIBUTION OF VOID DEFECT IN CZOCHRALSKI SILICON Akatsuka, M., Okui, M., Umeno, S., Sueoka, K. Electrochemical Society
4 Conference Proceedings 566c. First Principles Determination of Highly Mobile Dopant-Interstitial Complexes and Their Relative Contribution to Dopant Diffusion In Silicon Kyoung E. Kweon, Gyeong S. Hwang American Institute of Chemical Engineers	10 Conference Proceedings Morphology of Oxide Precipitates in Czochralski Silicon Crystals Sueoka,K., Ikeda,N., Yamamoto,T., Kobayashi,S. Trans Tech Publications
5 Conference Proceedings First-Principles Calculations of Titanium Dopants in Alumina Matsunaga, K., Mizoguchi, T., Nakamura, A., Yamamoto, T., Ikuhara, Y. Trans Tech Publications	11 Conference Proceedings Oxygen Precipitation Behavior and its Optimum Condition for Internal Gettering and Mechanical Strength in Epitaxial and Polished Silicon Wafers Sueoka,K., Akatsuka,M., Onno,T., Asayama,E., Koike,Y., Adachi,N., Sadamitsu,S., Katahama,H. Electrochemical Society, SPIE-The International Society for Optical Engineering
6 Conference Proceedings First-Principles Study of Vacancy-Assisted As Diffusion in Silicon Xie, J., Chen, S. P. MRS - Materials Research Society	12 Conference Proceedings Site-by-Site Electronic Structure Analysis of Al-Containing Complex Compounds Using Channeling EELS and First Principles Calculations K. Tatsumi, Y. Yamamoto, S. Muto Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12