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First Principles Calculation for Cu Gettering by Dopant or Dopant-Vacancy Complex in Silicon Crystal

Author(s):
Publication title:
Silicon materials science and technology X
Title of ser.:
ECS transactions
Ser. no.:
2(2)
Pub. date:
2006
Page(from):
261
Page(to):
274
Pages:
14
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774390 [156677439X]
Language:
English
Call no.:
E23400/2-2
Type:
Conference Proceedings

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