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Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures

Author(s):
Publication title:
Microelectronics Technology and Devices : SBMICRO 2007
Title of ser.:
ECS transactions
Ser. no.:
9(1)
Pub. date:
2007
Page(from):
397
Page(to):
404
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775656 [1566775655]
Language:
English
Call no.:
E23400/9-1
Type:
Conference Proceedings

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