Blank Cover Image

Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs

Author(s):
Publication title:
Microelectronics Technology and Devices : SBMICRO 2007
Title of ser.:
ECS transactions
Ser. no.:
9(1)
Pub. Year:
2007
Page(from):
343
Page(to):
352
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775656 [1566775655]
Language:
English
Call no.:
E23400/9-1
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Improved Model to Determine the Generation Lifetime in Short Channel SOI nMOSFETs

M. Galeti, J. A. Martino, E. Simoen, C. Claeys

Electrochemical Society
7 Conference Proceedings Analysis of deep submicrometer bulk and fully depleted SOI NMOSFET analog operation at cryogenic temperatures

Pavanello, M.A., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
2 Conference Proceedings Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs

Galeti, M., Martino, J. A., Simoen, E., Claeys, C.

Electrochemical Society
8 Conference Proceedings Analysis of the Linear Kink Effect in Partially Depleted SOI NMOSFETs

Agopian, P. G., Martino, J. A., Simoen, E., Claeys, C.

Electrochemical Society
3 Conference Proceedings Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors

M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys

Electrochemical Society
9 Conference Proceedings Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

L.M. Camillo, J.A. Martino, E. Simoen, C. Claeys

Electrochemical Society
4 Conference Proceedings Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs

Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C.

Electrochemical Society
10 Conference Proceedings Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K

Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
5 Conference Proceedings The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

P. G. DerAgopian, J. A. Martino, E. Simoen, C. Claeys

Electrochemical Society
11 Conference Proceedings The "C" Shape Behavior of the Floating Body Effect in Function of Temperature in PD SOI nMOSFETs

P. G. Agopian, J. A. Martino, E. Simoen, C. Claeys

Electrochemical Society
6 Conference Proceedings Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K

Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C.

Electrochemical Society
12 Conference Proceedings Behavior of Graded-Channel Fully Depleted SOI NMOSFET at High Temperatures

Galeti, M., Pavanello, M.A., Martino, J.A.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12