LEIS Study of ALD WNxCy Growth on Dielectric Layers

LEIS Study of ALD WNxCy Growth on Dielectric Layers

Author(s):

M. Stokhof

Publication title:

Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA

Title of ser.:

ECS transactions

Ser. no.:

1(10)

Pub. Year:

2006

Page(from):

71

Page(to):

78

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774437 [1566774438]

Language:

English

Call no.:

E23400/1-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047104
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	208th
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	2005.10.16-2005.10.21

Similar Items:

1 Conference Proceedings 57 High-k Dielectric Growth on Germanium by Atomic Layer Deposition Rahtu, A., Ralli, K., Putkonen, M., Tuominen, M., Haukka, S. Electrochemical Society	7 Conference Proceedings Characterization of Atomic Layer Deposited WNxCy Thin Film as a Diffusion Barrier for Copper Metallization Kim, Soo-Hyun, Oh, Su Suk, Kim, Hyun-Mi, Kang, Dae-Hwan, Kim, Ki-Bum, Li, Wei-Min, Haukka, Suvi, Tuominen, Marko Materials Research Society
2 Conference Proceedings ALD Technology - Present and Future Challenges S. Haukka Electrochemical Society	8 Conference Proceedings Atomic Layer Deposition of NbN and Nb(Si)N for Metal Electrodes H. Huotari, S. Haukka, R. Matero, A. Rahtu, E. Tois, M. Tuominen Electrochemical Society
3 Conference Proceedings High Growth Rate SiO₂ by Atomic Layer Deposition R. Matero, S. Haukka, M. Tuominen Electrochemical Society	9 Conference Proceedings Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD) V. S. Chang, Y. Hou, P. Hau, P. Lim, L. Yao, F. Yen, C. Hung, H. Lin, J. Jiang, Y. Jin, C. Chen, H. Tao, S. Chen, S. … Electrochemical Society
4 Conference Proceedings Study of layer-by-layer growth of silica on alumina and alumina on silica using IR spectroscopy of adsorbed CO Tsyganenko, A. A., Manoilova, O. V., Bulanin, K. M., Storozhev, P. Yu., Haukka, S., Palukka, A., Lindblad, M. Elsevier	10 Conference Proceedings Atomic Layer CVD For Continuously Shrinking Devices Haukka, S., Elers, K., Tuominen, M. Materials Research Society
5 Conference Proceedings * Ultra Thin High-K Dielectrics Grown by Atomic Layer Deposition: A Comparative Study of ZrO2, HfO2, Y2O3 and Al2O3 Gusev, E.P., Canter, E., Copel, M., Gribelyuk, M., Buchanan, D.A., Okorn-Schmidt, H., D'Emic, C., Kozlowski, P., … Electrochemical Society	11 Conference Proceedings Scale-up of the BaTiO₃ ALD Process onto 200mm Wafer R. Matero, A. Rahtu, S. Haukka, M. Tuominen, M. Vehkamäki, T. Hatanpää, M. Ritala, M. Leskelä Electrochemical Society
6 Conference Proceedings ALD alumina films as buried dielectric layers for SOI structures de Beaumont, C., Moriceau, H., Rayssac, O., Bresson, N., Cristoloveanu, S., Charvet, A.M. Electrochemical Society	12 Conference Proceedings Optimization of LPCVD Nitride Deposition Conditions for Non-Volatile Memory Inter Poly Dielectric Applications Teeperi, M.J., van Wiek, M.A.A.M., Sprey, H. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12