Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability | 東京工業大学附属図書館文献データベース

Blank Cover Image

Atomic Layer Deposited Hf₂2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability

Author(s):

M. Quevedo-Lopez

Publication title:

Atomic layer deposition : at the 208th ECS Meeting, October 16-21, 2005, Los Angeles, California, USA

Title of ser.:

ECS transactions

Ser. no.:

1(10)

Pub. Year:

2006

Page(from):

15

Page(to):

28

Pages:

14

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774437 [1566774438]

Language:

English

Call no.:

E23400/1-10

Type:

Conference Proceedings

Details

TDL ID:	ZA00047104
Series ID:	PA00000034
Conf. info. (Name):	ECS Meeting
Conf. info. (Number):	208th
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	2005.10.16-2005.10.21

Similar Items:

1 Conference Proceedings High Performance Metal Gate CMOSFETs with Aggressively Scaled Hf-Based High-k S. Song, G. L. Zhang, S. Bae, P. Kirsch, P. Majhi, R. Choi, B. Lee Electrochemical Society	7 Conference Proceedings Towards Understanding of Processing-nanostructure-property Inter-relationships in High-k/Metal Gate Stacks Majhi, P., Bersuker, G., Lee, B. H. Springer
2 Conference Proceedings Prospect of High-k/Metal Gate Stack Technology for Future CMOS Devices B. H. Lee, P. Kirsch, P. Majhi, S. Song, R. Chol, N. Moumen, G. Bersuker Electrochemical Society	8 Conference Proceedings 52. Atomic Layer Deposition of high-k metal oxides for gate and capacitor dielectrics Senzaki, Y., Pork, S. G., Iliguchi, R., Chotliom, H., Bortholomew, L., Al-Lomi, S., Borelli, C., Lee, S-I., Helms, A., … Electrochemical Society
3 Conference Proceedings Recent Development of CMOS Technology with Hf-Based High-k Dielectric Song, S.C., Bersuker, G., Zhang, Z., Lee, B.H., Huffman, C., Bae, S.H., Sim, J.H., Kirsch, P., Majhi, P., Moumen, N,, … Electrochemical Society	9 Conference Proceedings CMOS Scaling For the Next Decade: Trends, Challenges and Opportunities P. Majhi, J. Oh, S. Lee, R. Harris, H. Tseng Electrochemical Society
4 Conference Proceedings Modeling and Engineering of Hafnium Silicate (HfSiO) Gate Dielectrics Deposited by Nano-Laminated Atomic-Layer Deposition (NL-ALD) V. S. Chang, Y. Hou, P. Hau, P. Lim, L. Yao, F. Yen, C. Hung, H. Lin, J. Jiang, Y. Jin, C. Chen, H. Tao, S. Chen, S. … Electrochemical Society	10 Conference Proceedings Atomic Layer Deposition for CMOS Scaling: High-κ Gate Dielectrics on Si, Ge, and III-V Semiconductors M. Frank Electrochemical Society
5 Conference Proceedings Comparison of MOSFET Characteristics Between ALD and MOCVD TiN Metal Gate on Hf Silicate Song, S.C., Lee, B.H., Zhang, Z., Choi, K., Bae, S.H., Alshareef, H., Majhi, P., Wen, H.C., Bennett, J., Sassman, B., … Electrochemical Society	11 Conference Proceedings Interdiffusion Studies of High-k Gate Dielectric Stack Constitutes Sivasubramiani, P, Quevedo-Lopez, M. A, Lee, T. H, Gnade, B. E., Wallace, R. M Springer
6 Conference Proceedings 33 ALD of Advanced High-k and Metal Gate Stacks for MOS Devices Gutt, J., Gopalan, S., Brown, G. A., Kirsch, P. D., Peterson, J. J., Gardner, M., Li, H.-J., Lysaght, P., Alshareef, H. … Electrochemical Society	12 Conference Proceedings Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications A. Delabie, L. Nyns, F. Bellenger, M. Caymax, T. Conard Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12