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Characteristics of the HfO₂ Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate

Author(s):
Publication title:
Physics and technology of high-k gate dielectrics III
Title of ser.:
ECS transactions
Ser. no.:
1(5)
Pub. date:
2006
Page(from):
459
Page(to):
464
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
Language:
English
Call no.:
E23400/1-5
Type:
Conference Proceedings

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