Effects of the Defects at HfOxNy/Si Interface on Electrical and Reliability Charucteristics of MOS Devices

Effects of the Defects at HfOxNy/Si Interface on Electrical and Reliability Charucteristics of MOS Devices

Author(s):

K. Chang-Liao

Publication title:

Physics and technology of high-k gate dielectrics III

Title of ser.:

ECS transactions

Ser. no.:

1(5)

Pub. Year:

2006

Page(from):

399

Page(to):

406

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774444 [1566774446]

Language:

English

Call no.:

E23400/1-5

Type:

Conference Proceedings

Details

TDL ID:	ZA00047099
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Conf. info. (Number):	3rd
Conf. info. (Venue):	Los Angeles, California, USA
Conf. info. (Date):	2005.10.16-2005.10.21

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