Blank Cover Image

Probing Point Defects in Stacks of Ultrathin High-k Metal Oxides on Semiconductors by Electron Spin Resonance: The Si/HfO₂ vs. the Ge/HfO₂ System

Author(s):
Publication title:
Physics and technology of high-k gate dielectrics III
Title of ser.:
ECS transactions
Ser. no.:
1(5)
Pub. Year:
2006
Page(from):
347
Page(to):
362
Pages:
16
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
Language:
English
Call no.:
E23400/1-5
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Point Defects and Traps in Stacks of Ultrathin High-k Metal Oxides on Si Probed by Electron Spin Resonance: Si/HfO2 System and N Incorporation

Stesmans, A., Afanas'ev, V., Clemer, K., Chen, F., Campbell, S.A.

Electrochemical Society
7 Conference Proceedings Correlation between development of leakage current and hydrogen ionization in ultrathin silicon dioxide layers

Afanas'ev, V. V., Stesmans, A.

MRS-Materials Research Society
2 Conference Proceedings Probing Point Defects and Traps in Stacks of Ultrathin Hafnium Oxides on (100) Si by Electron Spin Resonance; Interfaces and N Incorporation

Stesmans, A, Afanas'ev, V. V

Springer
8 Conference Proceedings Electronic Properties of SiON/HfO2 Insulating Stacks on 4H-SiC (0001)

Afanas'ev, V.V., Campbell, S.A., Cheong, K.Y., Ciobanu, F., Dimitrijev, S., Pensl, G., Stesmans, A., Zhong, L.

Trans Tech Publications
3 Conference Proceedings Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-k Dielectric Layers on Silicon

Stesmans, A. L., Afanas'ev, V. V.

Materials Research Society
9 Conference Proceedings Defect Generation in High-K Dielectric Stacks: Characterization and Modelling

M. Houssa, J. L. Autran, V. V. Afanas'ev, A. Stesmans, M. M. Heyns

Electrochemical Society
4 Conference Proceedings Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers

Stesmans, A., Afanas'ev, V.V.

Electrochemical Society
10 Conference Proceedings SiC/SiO2 interface defects

Afanas'ev, V. V.

Kluwer Academic Publishers
5 Conference Proceedings Electron spin resonance features of the Pb1 interface defect in thermal(100)Si/SiO2

Stesmans,A., Afanas'ev,V.V.

Trans Tech Publications
11 Conference Proceedings Properties of High-k and Extremely Thin Silicon Nitride Stacks

Zhang, Z., Fedorenko, Y., Truong, L., Shi, X., Afanas'ev, V., Stesmans, A., Campbell, S.A.

Electrochemical Society
6 Conference Proceedings Determination of band offsets of Al2O3, ZrO2, HfO2, TiO2, Ta2O5, Nb2O5.

Afanas'ev, Stesmans

Electrochemical Society
12 Conference Proceedings *Characterization of the Pb1 interface defect in thermal (100)Si/SiO2 by electron spin resonance: 29Si hyperfine structure and electrical relevance

Stesmans, A. L.

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12