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Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation

Author(s):
V. S. Kaushik
K. Rohr
S. Hyun
S. De Gendt
S. Van Elshocht
A. Debbie
J. Everoert
A. Veboso
S. Brus
L. Ragnarason
O. Richard
M. Caymax
M. Heyns
8 more
Publication title:
Physics and technology of high-k gate dielectrics III
Title of ser.:
ECS transactions
Ser. no.:
1(5)
Pub. date:
2006
Page(from):
305
Page(to):
312
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
Language:
English
Call no.:
E23400/1-5
Type:
Conference Proceedings

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