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Crystallization and Wet Etching Characteristics of Atomic Layer Deposited HfO₂ Films Using Hf[N(CH₃)(C₂H₅)]₃[OC(CH₃)₃]) Precursor and O₃ Oxidant

Author(s):
M. Seo
S. Kim
K. Kim
T. Park
J. Kim
C. Hwang
H. Cho
2 more
Publication title:
Physics and technology of high-k gate dielectrics III
Title of ser.:
ECS transactions
Ser. no.:
1(5)
Pub. date:
2006
Page(from):
211
Page(to):
218
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
Language:
English
Call no.:
E23400/1-5
Type:
Conference Proceedings

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