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Dielectric Properties of (ZrxTi₁₋x)O₂ Film on Ru/Si0₂/Si Substrates Deposited by the Atomic Layer Deposition Using [Zr(OtBu)₄ + Ti(OtBu)₄] Cocktail Source

Author(s):
J. Lim
K. Cho
K. Kim
C. Yoo
S. Kim
U. Chung
J. Moon
2 more
Publication title:
Physics and technology of high-k gate dielectrics III
Title of ser.:
ECS transactions
Ser. no.:
1(5)
Pub. date:
2006
Page(from):
153
Page(to):
160
Pages:
8
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
Language:
English
Call no.:
E23400/1-5
Type:
Conference Proceedings

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