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Ruthenium and Ruthenium Oxide Films Deposition by MOCVD Using Ru(DMPD)₂

Author(s):
Publication title:
Physics and technology of high-k gate dielectrics III
Title of ser.:
ECS transactions
Ser. no.:
1(5)
Pub. Year:
2006
Page(from):
139
Page(to):
144
Pages:
6
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774444 [1566774446]
Language:
English
Call no.:
E23400/1-5
Type:
Conference Proceedings

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