Influence of Dislocations on the Performance of High Indium Content In₀.₈₆Al₀.₁₄As/In₀.₈₆Ga₀.₁₄ As Heterojunction Bipolar Transistors

Influence of Dislocations on the Performance of High Indium Content In₀.₈₆Al₀.₁₄As/In₀.₈₆Ga₀.₁₄ As Heterojunction Bipolar Transistors

Author(s):

R. Sandhu

Publication title:

State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI

Title of ser.:

ECS transactions

Ser. no.:

1(2)

Pub. Year:

2006

Page(from):

36

Page(to):

43

Pages:

8

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774314 [1566774314]

Language:

English

Call no.:

E23400/1-2

Type:

Conference Proceedings

Details

TDL ID:	ZA00047096
Series ID:	PA00000034
Conf. info. (Name):	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Symposium on Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics ; Meeting of the Electrochemical Society
Conf. info. (Number):	43rd ; 6th ; 208th
Conf. info. (Venue):	Los Angeles, CA, USA
Conf. info. (Date):	2005.10.16-2005.10.21

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