Characterization of Tunneling Current Through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method

Characterization of Tunneling Current Through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method

Author(s):

N. Yoshii

Publication title:

Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5

Title of ser.:

ECS transactions

Ser. no.:

1(1)

Pub. Year:

2005

Page(from):

277

Page(to):

282

Pages:

6

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774307 [1566774306]

Language:

English

Call no.:

E23400/1-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047095
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ; Fall Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 2005
Conf. info. (Venue):	Los Angeles, CA, USA
Conf. info. (Date):	2005.10.16-2005.10.20

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