High-Resolution X-Ray Photoelectron Spectroscopy Study on Si₃N₄/Si Interface Structures and Its Correlation with Hysteresis in C(V) Curves | 東京工業大学附属図書館文献データベース

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High-Resolution X-Ray Photoelectron Spectroscopy Study on Si₃N₄/Si Interface Structures and Its Correlation with Hysteresis in C(V) Curves

Author(s):

Publication title:

Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5

Title of ser.:

ECS transactions

Ser. no.:

1(1)

Pub. Year:

2005

Page(from):

267

Page(to):

276

Pages:

10

Pub. info.:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774307 [1566774306]

Language:

English

Call no.:

E23400/1-1

Type:

Conference Proceedings

Details

TDL ID:	ZA00047095
Series ID:	PA00000034
Conf. info. (Name):	International Symposium on The Physics and Chemistry of SiO2 and the Si-SiO2 Interface ; Fall Meeting of the Electrochemical Society
Conf. info. (Number):	5th ; 2005
Conf. info. (Venue):	Los Angeles, CA, USA
Conf. info. (Date):	2005.10.16-2005.10.20

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