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Impact of Plasma Nitridation Method on VFB Shift and the Reliability of CMOSFETs

Author(s):
D.-C. Kim
M.-H. Cho
J.-H. Heo
B.-Y. Koo
C.-S. Kim
Y.-J. Noh
J.-H. Kim
K.-B. Clung
Y. Shin
D.-W. Moon
U.-I. Chung
J.-T. Moon
7 more
Publication title:
Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5
Title of ser.:
ECS transactions
Ser. no.:
1(1)
Pub. Year:
2005
Page(from):
233
Page(to):
242
Pages:
10
Pub. info.:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566774307 [1566774306]
Language:
English
Call no.:
E23400/1-1
Type:
Conference Proceedings

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