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A Proposal of a Parallel Resistance Model for the Conduction Mechanism of Binary Transition Metal Oxide ReRAM

Author(s):
Kentaro Kinoshita
Hideyuki Noshiro
Chikako Yoshida
Yoshihiro Sato
Masaki Aoki
Yoshihiro Sugiyama
1 more
Publication title:
Materials and processes for nonvolatile memories II : symposium held April 10-13, 2007, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
997
Pub. Year:
2007
Page(from):
211
Page(to):
218
Pages:
8
Pub. info.:
Warrendale, Pa.: Materiaeditors, Tingkai Li ... [et al.] ls Research Society
ISSN:
02729172
ISBN:
9781558999572 [1558999574]
Language:
English
Call no.:
M23500/997
Type:
Conference Proceedings

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