Localized Charge Trapping Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Sailcide Buried Bitlines

Localized Charge Trapping Memory Cells in a 63 nm Generation with Nanoscale Epitaxial Cobalt Sailcide Buried Bitlines

Author(s):

Publication title:

Materials and processes for nonvolatile memories II : symposium held April 10-13, 2007, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

997

Pub. Year:

2007

Page(from):

65

Page(to):

70

Pages:

6

Pub. info.:

Warrendale, Pa.: Materiaeditors, Tingkai Li ... [et al.] ls Research Society

ISSN:

02729172

ISBN:

9781558999572 [1558999574]

Language:

English

Call no.:

M23500/997

Type:

Conference Proceedings

Details

TDL ID:	ZA00048534
Series ID:	PA00000011
Conf. info. (Name):	MRS Spring Meeting ; Symposium on Materials and Processes for Nonvolatile Memories
Conf. info. (Number):	2007 ; 2nd
Conf. info. (Venue):	San Francisco, California, USA
Conf. info. (Date):	2007.04.10-2007.04.13

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