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Generation-recombination noise in forward-biased 4H-SiC p-n diode

Author(s):
S. L. Rumyantsev ( Rensselaer Polytechnic Institute (USA) and Ioffe Institute (Russia) )
A. Dmitriev ( Ioffe Institute (Russia) )
M. Levinshtein ( Ioffe Institute (Russia) )
D. Veksler ( Rensselaer Polytechnic Institute (USA) )
M. S. Shur ( Rensselaer Polytechnic Institute (USA) )
J. Palmour ( Cree, Inc. (USA) )
M. Das ( Cree, Inc. (USA) )
B. Hull ( Cree, Inc. (USA) )
3 more
Publication title:
Noise and fluctuations in circuits, devices, and materials : 21-24 May 2007, Florence, Italy
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6600
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819467379 [0819467375]
Language:
English
Call no.:
P63600/6600
Type:
Conference Proceedings

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