Variation of the properties of 4H-SiC radiation detectors upon irradiation by 24 GeV protons

Variation of the properties of 4H-SiC radiation detectors upon irradiation by 24 GeV protons

Author(s):

V. Kazukauskas ( Vilnius Univ. (Lithuania) )
R. Jasiulionis ( Institute of Physics (Lithuania) )
V. Kalendra ( Vilnius Univ. (Lithuania) )
J. Vaitkus ( Vilnius Univ. (Lithuania) )

Publication title:

Advanced optical materials, technologies, and devices : 27-30 August 2006, Vilnius, Lithuania

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6596

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819467324 [0819467324]

Language:

English

Call no.:

P63600/6596

Type:

Conference Proceedings

Details

TDL ID:	ZA00046903
Series ID:	PA00000029
Conf. info. (Name):	Advanced Optical Materials, Technologies, and Devices
Conf. info. (Number):	2007
Conf. info. (Venue):	Vilnius, Lithuania
Conf. info. (Date):	2006.08.27-2006.08.30

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