Masks for flash memory gates for the 45nm node: binary or attenuated?

Masks for flash memory gates for the 45nm node: binary or attenuated?

Author(s):

E. van Setten ( ASML Netherlands B.V. (Netherlands) )
A. Engelen ( ASML Netherlands B.V. (Netherlands) )
J. Finders ( ASML Netherlands B.V. (Netherlands) )
M. Dusa ( ASML US, Inc. (USA) )

Publication title:

EMLC 2007 : 23rd european mask and lithography conference : 22-25 January 2007, Grenoble, France

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6533

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466556 [0819466557]

Language:

English

Call no.:

P63600/6533

Type:

Conference Proceedings

Details

TDL ID:	ZA00046840
Series ID:	PA00000029
Conf. info. (Name):	European Mask and Lithography Conference
Conf. info. (Number):	2007 : 23rd
Conf. info. (Venue):	Grenoble, France
Conf. info. (Date):	2007.01.22-2007.01.25

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