A method for generating assist-features in full-chip scale and its application to contact layers of sub-70nm DRAM devices

A method for generating assist-features in full-chip scale and its application to contact layers of sub-70nm DRAM devices

Author(s):

D. Park ( SAMSUNG Electronics Co., Ltd. (South Korea) )

S. Kim ( SAMSUNG Electronics Co., Ltd. (South Korea) )

C. Hwang ( SAMSUNG Electronics Co., Ltd. (South Korea) )

S. Lee ( SAMSUNG Electronics Co., Ltd. (South Korea) )

H. Cho ( SAMSUNG Electronics Co., Ltd. (South Korea) )

J. Moon ( SAMSUNG Electronics Co., Ltd. (South Korea) )

1 more

Publication title:

Optical microlithography XX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6520

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466396 [0819466395]

Language:

English

Call no.:

P63600/6520

Type:

Conference Proceedings

Details

TDL ID:	ZA00046827
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical Microlithography
Conf. info. (Number):	2007 : 20th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.27-2007.03.02

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