Behavior and effects of water penetration in 193-nm immersion lithography process materials

Behavior and effects of water penetration in 193-nm immersion lithography process materials

Author(s):

T. Niwa ( Tokyo Electron Kyushu Ltd. (Japan) )

S. Scheer ( Tokyo Electron America, Inc. (USA) )

M. Carcasi ( Tokyo Electron America, Inc. (USA) )

M. Enomoto ( Tokyo Electron Kyushu Ltd. (Japan) )

T. Tomita ( Tokyo Electron Kyushu Ltd. (Japan) )

K. Hontake ( Tokyo Electron Kyushu Ltd. (Japan) )

H. Kyoda ( Tokyo Electron Kyushu Ltd. (Japan) )

J. Kitano ( Tokyo Electron Kyushu Ltd. (Japan) )

3 more

Publication title:

Advances in resist materials and processing technology XXIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6519

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466389 [0819466387]

Language:

English

Call no.:

P63600/6519

Type:

Conference Proceedings

Details

TDL ID:	ZA00046826
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Materials and Processing Technology
Conf. info. (Number):	2007 : 24th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.26-2007.02.28

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