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Line-edge roughness in 193-nm resists: lithographic aspects and etch transfer

Author(s):
T. Wallow ( Advanced Micro Devices, Inc. (USA) )
A. Acheta ( Advanced Micro Devices, Inc. (USA) )
Y. Ma ( Advanced Micro Devices, Inc. (USA) )
A. Pawloski ( Affymetrix, Corp. (USA) )
S. Bell ( Spansion LLC (USA) )
B. Ward ( Spansion LLC (USA) )
C. Tabery ( Advanced Micro Devices, Inc. (USA) )
B. L. Fontaine ( Advanced Micro Devices, Inc. (USA) )
R. Kim ( Advanced Micro Devices, Inc. (USA) )
S. McGowan ( Advanced Micro Devices, Inc. (USA) )
H. J. Levinson ( Advanced Micro Devices, Inc. (USA) )
6 more
Publication title:
Advances in resist materials and processing technology XXIV
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6519
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819466389 [0819466387]
Language:
English
Call no.:
P63600/6519
Type:
Conference Proceedings

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