Characteristics and prevention of pattern collapse in EUV lithography

Characteristics and prevention of pattern collapse in EUV lithography

Author(s):

W. Chang ( Hanyang Univ. (South Korea) )

E. Kim ( Hanyang Univ. (South Korea) )

Y. Kang ( Hanyang Univ. (South Korea) )

S. Park ( Hanyang Univ. (South Korea) )

C. Lim ( Hynix Semiconductor Inc. (South Korea) )

K. Won ( Seoul National Univ. (South Korea) )

J. Kim ( Seoul National Univ. (South Korea) )

H. Oh ( Hanyang Univ. (South Korea) )

3 more

Publication title:

Emerging lithographic technologies XI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6517

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466365 [0819466360]

Language:

English

Call no.:

P63600/6517

Type:

Conference Proceedings

Details

TDL ID:	ZA00046824
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Emerging Lithographic Technologies
Conf. info. (Number):	2007 : 11th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.27-2007.03.01

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