Low resistance and high reflectivity Al based reflectors for p-GaN flip process

Low resistance and high reflectivity Al based reflectors for p-GaN flip process

Author(s):

S. W. Chae ( Samsung Electro-Mechanics Co., Ltd. (South Korea) )

K. Y. Ko ( Samsung Electro-Mechanics Co., Ltd. (South Korea) )

D. W. Kim ( Samsung Electro-Mechanics Co., Ltd. (South Korea) )

S. M. Hwang ( Samsung Electro-Mechanics Co., Ltd. (South Korea) )

H. J. Park ( Samsung Electro-Mechanics Co., Ltd. (South Korea) )

J. W. Kim ( Samsung Electro-Mechanics Co., Ltd. (South Korea) )

Y. C. Kim ( Samsung Electro-Mechanics Co., Ltd. (South Korea) )

2 more

Publication title:

Light-emitting diodes : research, manufacturing, and applications XI : 24-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6486

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465993 [0819465992]

Language:

English

Call no.:

P63600/6486

Type:

Conference Proceedings

Details

TDL ID:	ZA00046794
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Light-Emitting Diodes
Conf. info. (Number):	2007 : 11th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.24-2007.01.25

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