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Characteristics of InAs/InGaAsP quantum dot laser diodes lasing at 1.55um

Author(s):
E. Lee ( Chungnam National Univ. (South Korea) )
Y. Jang ( Chungnam Nationa Univ. (South Korea) )
N. Kim ( Chungnam National Univ. (South Korea) )
D. Lee ( Chungnam National Univ. (South Korea) )
S. Pyun ( Sungkyunkwan Univ. (South Korea) )
D. Ko ( Sungkyunkwan Univ. (South Korea) )
J. Yoon ( Sungkyunkwan Univ. (South Korea) )
W. Jeong ( Sungkyunkwan Univ. (South Korea) )
J. Jang ( NanoEpi Technologies Corp. (South Korea) )
4 more
Publication title:
Novel in-plane semiconductor lasers VI : 22-25 January 2007, San Jose, California, USA
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
6485
Pub. Year:
2007
Pub. info.:
Bellingham, Wash.: SPIE - The International Society of Optical Engineering
ISSN:
0277786X
ISBN:
9780819465986 [0819465984]
Language:
English
Call no.:
P63600/6485
Type:
Conference Proceedings

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