1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots - three candidates as active material

1.3 μm VCSELs: InGaAs/GaAs, GaInNAs/GaAs multiple quantum wells, and InAs/GaAs quantum dots - three candidates as active material

Author(s):

P. Gilet ( CEA-Leti MINATEC (France) )

E. Pougeoise ( CEA-Leti MINATEC (France) )

L. Grenouillet ( CEA-Leti MINATEC (France) )

P. Grosse ( CEA-Leti MINATEC (France) )

N. Olivier ( CEA-Leti MINATEC (France) )

S. Poncet ( CEA-Leti MINATEC (France) )

A. Chelnokov ( CEA-Leti MINATEC (France) )

J. M. Gerard ( CEA-Grenoble DRFMC (France) )

R. Stevens ( Intexys Photonics (France) )

R. Hamelin ( Intexys Photonics (France) )

M. Hammar ( Royal Institute of Technology (Sweden) )

J. Berggren ( Royal Institute of Technology (Sweden) )

P. Sundgren ( Royal Institute of Technology (Sweden) )

8 more

Publication title:

Vertical-cavity surface-emitting lasers XI : 24-25 January 2007, San Jose, California, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6484

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819465979 [0819465976]

Language:

English

Call no.:

P63600/6484

Type:

Conference Proceedings

Details

TDL ID:	ZA00046792
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Vertical-Cavity Surface-Emitting Lasers
Conf. info. (Number):	2007 : 11th
Conf. info. (Venue):	San Jose, California, USA
Conf. info. (Date):	2007.01.24-2007.01.25

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